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NTB6410AN, NTP6410AN, NVB6410AN
ELECTRICAL CHARACTERISTICS (T J = 25 ° C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage Temper-
ature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
100
94
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 100 V
T J = 25 ° C
T J = 150 ° C
1.0
100
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = $ 20 V
$ 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
V GS(th)
V GS(th) /T J
V GS = V DS , I D = 250 m A
2.0
9.0
4.0
V
mV/ ° C
Drain ? to ? Source On ? Resistance
R DS(on)
V GS = 10 V, I D = 76 A
11
13
m W
V GS = 10 V, I D = 20 A
10
12
Forward Transconductance
g FS
V DS = 5 V, I D = 20 A
40
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C iss
4500
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 25 V, V GS = 0 V,
f = 1 MHz
650
250
Total Gate Charge
Threshold Gate Charge
Q G(TOT)
Q G(TH)
120
5.2
nC
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q GS
Q GD
V GS = 10 V, V DS = 80 V,
I D = 76 A
20
57
Plateau Voltage
Gate Resistance
V GP
R G
5.1
2.4
V
W
SWITCHING CHARACTERISTICS, V GS = 10 V (Note 3)
Turn ? On Delay Time
t d(on)
17
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DD = 80 V,
I D = 76 A, R G = 6.2 W
170
120
190
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
I S = 76 A
T J = 25 ° C
T J = 125 ° C
1.0
0.9
1.3
V
Reverse Recovery Time
t rr
93
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, I S = 76 A,
dI SD /dt = 100 A/ m s
69
24
Reverse Recovery Charge
Q RR
300
nC
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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